Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons-Reference-Cited by-同舟云学术

Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons

Published:2014-02-28 Issue:10 Volume:10 Page:1945-1952
ISSN:1613-6810
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language:en
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Author:

Lin Aigu L.¹²,Peng Haiyang³,Liu Zhiqi¹²,Wu Tom³,Su Chenliang⁴,Loh Kian Ping⁴,Ariando ¹²,Chen Wei⁴,Wee Andrew T.S.¹²

Affiliation:

1. NUS Graduate School of Integrative Sciences and Engineering; National University of Singapore; 28 Medical Drive Singapore 117456

2. Department of Physics; Faculty of Science, National University of Singapore; 2 Science Drive 3 Singapore 117542

3. Division of Physics and Applied Physics; Nanyang Technological University; 21 Nanyang Link Singapore 637371

4. Department of Chemistry, Faculty of Science; National University of Singapore; 3 Science Drive 3 Singapore 117543

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference25 articles.

1. Spintronics: Fundamentals and applications

2. Spintronics

3. Magnetoelectronics

4. Spintronics: A Spin-Based Electronics Vision for the Future

5. Spintronics in organic π-electronic systems

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