Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects-Reference-Cited by-同舟云学术

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Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects

Published:2018-04-23 Issue:21 Volume:14 Page:1800365
ISSN:1613-6810
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language:en
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Author:

Xia Congxin¹^ORCID,Xiong Wenqi¹,Du Juan¹,Wang Tianxing¹,Peng Yuting²,Wei Zhongming³,Li Jingbo³,Jia Yu⁴

Affiliation:

1. College of Physics and Materials Science; Henan Normal University; Xinxiang 453007 China

2. Department of Physics; University of Texas at Arlington; TX 76019 USA

3. Institutes of Semiconductors; Chinese Academy of Sciences; Beijing 100083 China

4. Key Laboratory for Special Functional Materials of Ministry of Education; Henan University; Kaifeng 475004 China

Funder

National Natural Science Foundation of China

Henan University

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference39 articles.

1. Van der Waals heterostructures

2. Atomically thin p–n junctions with van der Waals heterointerfaces

3. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

4. Light-emitting diodes by band-structure engineering in van der Waals heterostructures

5. Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

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