Electronic Doping Controlled Migration of Dislocations in Polycrystalline 2D WS 2-Reference-Cited by-同舟云学术

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Electronic Doping Controlled Migration of Dislocations in Polycrystalline 2D WS 2

Published:2019-05-21 Issue:27 Volume:15 Page:1805145
ISSN:1613-6810
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language:en
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Author:

Zou Xiaolong¹²^ORCID,Liu Mingjie¹,Yakobson Boris I.¹

Affiliation:

1. Department of Materials Science and NanoEngineering Department of Chemistry, and the Smalley Institute for Nanoscale Science and Technology Rice University Houston TX 77005 USA

2. Shenzhen Geim Graphene Research Center and Low‐dimensional Materials and Devices Laboratory Tsinghua‐Berkeley Shenzhen Institute Tsinghua University Shenzhen Guangdong 518055 P. R. China

Funder

Office of Naval Research

Guangdong Innovative and Entrepreneurial Research Team Program

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201805145

Reference62 articles.

1. The dislocation core in crystalline materials

2. Charged Impurity Effects on the Deformation of Dislocation-Free Germanium

3. Effect of Impurities on the Individual Dislocation Mobility in Silicon

4. Dislocation velocities and electronic doping in silicon

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