Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions-Reference-Cited by-同舟云学术

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Complementary Resistive Switching Using Metal–Ferroelectric–Metal Tunnel Junctions

Published:2019-02-10 Issue:11 Volume:15 Page:1805042
ISSN:1613-6810
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language:en
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Author:

Qian Mengdi¹,Fina Ignasi¹^ORCID,Sánchez Florencio¹,Fontcuberta Josep¹

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB‐CSIC) Campus UAB, Bellaterra 08193 Catalonia Spain

Funder

Ministeriet for Forskning Innovation og Videregående Uddannelser

Generalitat de Catalunya

China Scholarship Council

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201805042

Reference61 articles.

1. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

2. The memristor revisited

3. The missing memristor found

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1. Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches;ACS Applied Electronic Materials;2024-08-16

2. The rise of semi-metal electronics;Nature Reviews Electrical Engineering;2024-08-01

3. Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes;Journal of Applied Physics;2024-03-04

4. Complementary Resistive Switching in ZnO/Al₂O₃ Bi-Layer Devices;IEEE Transactions on Nanotechnology;2023

5. Polarization controlled resistive switching in bulk ferroelectric ceramics: A universal phenomenon;Journal of Alloys and Compounds;2021-12

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