Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy-Reference-Cited by-同舟云学术

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Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy

Published:2014-03-07 Issue:13 Volume:10 Page:2589-2594
ISSN:1613-6810
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language:en
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Author:

Su Sheng-Han¹²,Hsu Yu-Te¹,Chang Yung-Huang¹,Chiu Ming-Hui¹,Hsu Chang-Lung¹,Hsu Wei-Ting³,Chang Wen-Hao³,He Jr-Hau²,Li Lain-Jong¹⁴

Affiliation:

1. Institute of Atomic and Molecular Sciences, Academia Sinica; Taipei 10617 Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University; Taipei 106 Taiwan

3. Department of Electrophysics; National Chiao-Tung University; HsinChu 300 Taiwan

4. Department of Medical Research; China Medical University Hospital; Taichung Taiwan

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference33 articles.

1. Single-layer MoS2 transistors

2. Phonon-limited mobility inn-type single-layer MoS2from first principles

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Emerging Photoluminescence in Monolayer MoS2

5. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

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