Ambient Degradation‐Induced Spin Paramagnetism in Phosphorene-Reference-Cited by-同舟云学术

Ambient Degradation‐Induced Spin Paramagnetism in Phosphorene

Published:2018-12-17 Issue: Volume: Page:1804386
ISSN:1613-6810
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language:en
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Author:

Chen Jie¹,Zhou Qionghua²,Pan Hongzhe¹,Zhang Weili¹,Zhao Yunlei¹,Deng Yu¹,Du Youwei¹,Wang Jinlan²^ORCID,Tang Nujiang¹^ORCID

Affiliation:

1. National Laboratory of Solid State MicrostructuresCollaborative Innovation Center of Advanced MicrostructuresJiangsu Provincial Key Laboratory for NanotechnologyNanjing University Nanjing 210093 P. R. China

2. School of PhysicsSoutheast University Nanjing 211189 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201804386

Reference47 articles.

1. Phosphorene excites materials scientists

2. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

3. Black Phosphorus: Narrow Gap, Wide Applications

4. Semiconducting black phosphorus: synthesis, transport properties and electronic applications

5. Black phosphorus field-effect transistors

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