Selective Nucleation of GaAs on Si Nanofacets-Reference-Cited by-同舟云学术

Selective Nucleation of GaAs on Si Nanofacets

Published:2017-04-24 Issue:22 Volume:13 Page:1603122
ISSN:1613-6810
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language:en
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Author:

Prieto Ivan¹²,Kozak Roksolana²,Skibitzki Oliver³,Rossell Marta D.²,Schroeder Thomas³⁴,Erni Rolf²,von Känel Hans¹²

Affiliation:

1. Laboratory for Solid State Physics; ETH Zürich; Otto-Stern-Weg 1 CH-8093 Zürich Switzerland

2. Electron Microscopy Center; Empa-Swiss Federal Laboratories for Materials Science and Technology; Überlandstrasse 129 CH-8600 Dübendorf Switzerland

3. IHP; Im Technologiepark 25 D-15236 Frankfurt (Oder) Germany

4. Brandenburgische Technische Universitaet; Konrad-Zuse Strasse 1 D-03046 Cottbus Germany

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Deutsche Forschungsgemeinschaft

IBM Research-Zürich, Switzerland

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference23 articles.

1. GaAs epitaxy on Si substrates: modern status of research and engineering

2. Gallium arsenide and other compound semiconductors on silicon

3. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

4. The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures

5. Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

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