Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies-Reference-Cited by-同舟云学术

Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies

Published:2015-09-09 Issue:41 Volume:11 Page:5472-5482
ISSN:1613-6810
Container-title:Small
language:en
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Author:

Labram John G.¹,Lin Yen-Hung¹,Anthopoulos Thomas D.¹

Affiliation:

1. Department of Physics and Centre for Plastic Electronics; Blackett Laboratory; Imperial College London; London SW7 2BW UK

Funder

European Research Council (ERC) AMPRO project

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference82 articles.

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4. Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

5. Upward mobility rocks!

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