Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation-Reference-Cited by-同舟云学术

Epitaxial Growth of Asymmetrically-Doped Bilayer Graphene for Photocurrent Generation

Published:2014-03-18 Issue:11 Volume:10 Page:2245-2250
ISSN:1613-6810
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language:en
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Author:

Zhou Yu¹,Yan Kai¹,Wu Di¹,Zhao Shuli¹,Lin Li¹,Jin Li²,Liao Lei¹,Wang Huan¹,Fu Qiang²,Bao Xinhe²,Peng Hailin¹,Liu Zhongfan¹

Affiliation:

1. Center for Nanochemistry; Beijing National Laboratory for Molecular Sciences (BNLMS); State Key Laboratory for Structural Chemistry of Unstable and Stable Species; College of Chemistry and Molecular Engineering; Academy for Advanced Interdisciplinary Studies; Peking University; Beijing 100871 People's Republic of China

2. State Key Laboratory of Catalysis; Dalian Institute of Chemical Physics; Chinese Academy of Sciences; Dalian 116023 China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201303696/fullpdf

Reference39 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

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4. Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

5. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

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