A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications-Reference-Cited by-同舟云学术

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A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications

Published:2019-07-02 Issue: Volume: Page:1900865
ISSN:1613-6810
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language:en
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Author:

Lin Che‐Yi¹²,Chen Chao‐Fu²,Chang Yuan‐Ming²,Yang Shih‐Hsien²³,Lee Ko‐Chun²³,Wu Wen‐Wei⁴⁵,Jian Wen‐Bin¹,Lin Yen‐Fu²⁶^ORCID

Affiliation:

1. Department of ElectrophysicsNational Chiao Tung University Hsinchu 300 Taiwan

2. Department of PhysicsNational Chung Hsing University Taichung 40227 Taiwan

3. Department of Electrical Engineering and Institute of Electronic EngineeringNational Tsing Hua University Hsinchu 300 Taiwan

4. Department of Materials Science and EngineeringNational Chiao Tung University Hsinchu 300 Taiwan

5. Center for the Intelligent Semiconductor Nano‐system Technology ResearchNational Chiao Tung University Hsinchu 300 Taiwan

6. Institute of NanoscienceNational Chung Hsing University Taichung 40227 Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.201900865

Reference50 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Toward Nanowire Electronics

4. Nanowire Transistor Performance Limits and Applications

5. Nanowire electronic and optoelectronic devices

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1. Electron Transport in AlGaAs Cylindrical Quantum Wire Sandwiched between Two GaAs Cylindrical Quantum Well Wires;Solid State Phenomena;2022-07-29

2. Freestanding germanene nanosheets for rapid degradation and photothermal conversion;Materials Today Nano;2021-08

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