Physically Transient Resistive Switching Memory Based on Silk Protein-Reference-Cited by-同舟云学术

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Physically Transient Resistive Switching Memory Based on Silk Protein

Published:2016-03-29 Issue:20 Volume:12 Page:2715-2719
ISSN:1613-6810
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language:en
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Author:

Wang Hong¹²,Zhu Bowen²,Ma Xiaohua¹,Hao Yue¹,Chen Xiaodong²

Affiliation:

1. School of Advanced Materials and Nanotechnology; Key Laboratory of Wide Band Gap Semiconductor Technology; Xidian University; Xi'an 710071 China

2. School of Materials Science and Engineering; Nanyang Technological University; 50 Nanyang Avenue Singapore 639798

Funder

National Research Foundation, Prime Minister's Office, Singapore

NTU-A*STAR Silicon Technologies Centre of Excellence

National Natural Science Foundation of China

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference62 articles.

1. A Physically Transient Form of Silicon Electronics

2. Transient, Biocompatible Electronics and Energy Harvesters Based on ZnO

3. Study of Physically Transient Insulating Materials as a Potential Platform for Transient Electronics and Bioelectronics

4. Materials, Designs, and Operational Characteristics for Fully Biodegradable Primary Batteries

5. Materials for Programmed, Functional Transformation in Transient Electronic Systems

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