Simulation of the surface trap effect on the gate lag in GaAs MESFETs
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy
Reference9 articles.
1. Low-frequency transconductance dispersion in InAlAs/InGaAs/InP HEMT's with single- and double-recessed gate structures
2. New and unified model for Schottky barrier and III–V insulator interface states formation
3. Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs
4. Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review;Micromachines;2023-10-31
2. 2D Simulation of Static Interface States in GaN HEMT with AlN/GaN Super-Lattice as Barrier Layer;Proceedings of International Conference on Soft Computing Techniques and Engineering Application;2013-12-21
3. Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices;IEEE Transactions on Electron Devices;2007-03
4. Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices;Semiconductor Science and Technology;2006-07-11
5. Analysis of the frequency dispersion of transconductance and drain conductance in GaAs MESFETs;Electronics and Communications in Japan (Part II: Electronics);2006
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