41.1: Invited Paper: Efficient pre‐treatment for improving the via hole profile in 4‐mask process TFT architecture-Reference-Cited by-同舟云学术

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41.1: Invited Paper: Efficient pre‐treatment for improving the via hole profile in 4‐mask process TFT architecture

Published:2019-09 Issue:S1 Volume:50 Page:456-458
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Zhen Liu¹,An-Thung Cho¹²,Hejing Zhang¹,Fengyun Yang¹,Kaijun Liu¹,Qionghua Mo¹,Chao Wei²,Wanfei Yong²,James Hsu¹²

Affiliation:

1. Chongqing HKC Optoelectronics Technology Co. Ltd. China

2. Chuzhou HKC Optoelectronics Technology Co. Ltd. China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13527

Reference4 articles.

1. 42.1: A Novel Four‐Mask‐Count Process Architecture for TFT‐LCDs

2. 34.1 : Advanced Four-Mask Process Architecture for the a-Si TFT Array Manufacturing Method

3. P-16: Novel Four-Mask Process in the FFS TFT-LCD with Optimum Multiple-Slit Design Applied by the use of a Gray-Tone Mask

4. Research on Effect of the Multi Factors to Improve Via Etch Uniformity and Profile;Chang Xinyuan;IDW’15,2015

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