The Potential and the Drawbacks of Underlap Single-Gate Ultrathin SOI MOSFET

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John Wiley & Sons Singapore Pte. Ltd

Reference19 articles.

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3. Robust engineering of S/D diffusion doping and metal contact layouts for multi-fin triple-gate FETs;Konishi;IEEE Electron Device Lett.,2006

4. Investigation of the source/drain asymmetric effects due to gate misalignment in planar double-gate MOSFETs;Yin;IEEE Trans. Electron Devices,2005

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