Impact of Halo Doping on the Subthreshold Performance of Deep-Submicrometer CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications
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John Wiley & Sons Singapore Pte. Ltd
Reference16 articles.
1. 0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation;Saito;IEEE Trans. Electron Devices,1998
2. Channel engineering for analog device design in deep submicron CMOS technology for system on chip applications;Deshpande;IEEE Trans. Electron Devices,2002
3. Impact of lateral asymmetric channel doping on deep submicrometer mixed-signal device and circuit performance;Narasimhulu;IEEE Trans. Electron Devices,2003
4. Analog device design for low power mixed mode application in deep submicron CMOS technology;Despande;IEEE Electron Device Lett.,2001
5. An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability;Shin;IEEE Trans. Electron Devices,1999
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