10‐4: <i>Late‐News Paper:</i> Precise Compensation of Device Variability in IGZO‐based Ferroelectric Thin‐Film Transistors for Enhanced Transparent Display Performance-Reference-Cited by-同舟云学术

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10‐4: Late‐News Paper: Precise Compensation of Device Variability in IGZO‐based Ferroelectric Thin‐Film Transistors for Enhanced Transparent Display Performance

Published:2024-06 Issue:1 Volume:55 Page:100-103
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Joch Daniel¹²,Lehninger David³,Sunil Athira³,Sanctis Shawn²,Lang Thomas¹,Zeltner Johannes³,Wartenberg Philipp³,Seidel Konrad³,Jank Michael P. M.¹²

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology IISB Erlangen Germany

2. Electron Devices (LEB) Friedrich-Alexander-Universität Erlangen-Nuremberg Erlangen Germany

3. Fraunhofer Institute for Photonic Microsystems IPMS Center Nanoelectronic Technologies (CNT) Dresden Germany

Abstract

We demonstrate the compensation of device‐to‐device variation in threshold voltage using programmable ferroelectric indium‐gallium‐zinc‐oxide thin‐film transistors. Furthermore, degradationinduced threshold voltage shift can be mitigated by programming, setting the characteristics back to their pristine state. This can be a promising alternative for the replacement of complex VT compensation circuits in display applications.

Publisher

Wiley

Reference13 articles.

1. Amorphous Oxide Semiconductors

2. Degradation Model of a-IGZO TFT due to High Drain Bias Stress

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