Affiliation:
1. The Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou People's Republic of China
2. School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu People's Republic of China
Abstract
AbstractThis article presents an extended resistive continuous broadband Class‐B/J (ERCB/J) power amplifier (PA) that incorporates two newly designed parameters in the drain voltage waveform. The incorporation of these newly designed parameters enables the PA to achieve a lower degradation rate of efficiency and output power over a wide bandwidth. To validate the effectiveness of the proposed method, a PA was designed, fabricated, and measured. The PA adopting commercially available GaN high electron mobility transistor technology operates from 1.0 to 3.0 GHz, exhibiting a fractional bandwidth of 100%. Across this frequency range, the PA delivers more than 39.6 dBm of saturated output power and more than 62% of drain efficiency. The measured results show good agreement with theoretical analysis and simulation, confirming the validity of the proposed method.