Effect of Nucleation Rate on Heteroepitaxial Diamond Growth on Si (100) via Electron-Emission-Enhanced Nucleation by Hot Filament Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effect of Nucleation Rate on Heteroepitaxial Diamond Growth on Si (100) via Electron-Emission-Enhanced Nucleation by Hot Filament Chemical Vapor Deposition

Published:1998-05 Issue:1 Volume:167 Page:117-123
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Liao K. J.,Wang W. L.,Feng B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition

2. Nucleation of oriented diamond films on nickel substrates

3. Study of crystallographic orientations in the diamond film on the (100) surface of cubic boron nitride using a Raman microprobe

4. Heteroepitaxy of diamond on c-BN: Growth mechanisms and defect characterization

5. Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in Air

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