The local crystallization thresholds under laser irradiation of the Cu <sup>+</sup> ‐ion implanted Ge layers with various thicknesses-Reference-Cited by-同舟云学术

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The local crystallization thresholds under laser irradiation of the Cu ⁺ ‐ion implanted Ge layers with various thicknesses

Published:2022-12-26 Issue:3 Volume:54 Page:245-249
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectroscopy

Author:

Pavlikov Alexander V.¹²^ORCID,Rogov Alexey M.³⁴,Sharafutdinova Alfia M.¹,Zoteyev Andrey V.¹,Khantimerov Sergey M.³,Gavrilova Tatiana P.³,Stepanov Andrey L.³

Affiliation:

1. Faculty of Physics M.V. Lomonosov Moscow State University, Leninskie Gory Moscow Russia

2. National Research University of Electronic Technology ‐ MIET Zelenograd Russia

3. Kazan Physical‐Technical Institute Russian Academy of Sciences Kazan Russia

4. Kazan Federal University Kazan Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.6488

Reference14 articles.

1. Ion implantation of semiconductors

2. Anisotropic heat conduction in silicon nanowire network revealed by Raman scattering

3. Photothermal Effects and Heat Conduction in Nanogranular Silicon Films

4. Raman-based technique for measuring thermal conductivity of graphene and related materials

5. Light scattering from laser annealed ion implanted semiconductors

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1. Ultra-Low Thermal Conductivity of Germanium Nanowires;Physics of the Solid State;2024-08

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