Affiliation:
1. Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering Wuhan Institute of Technology Wuhan China
2. Hubei Institute of Quality Supervision and Inspection Jingzhou Branch Jingzhou China
Abstract
AbstractWith the good planarity of conjugated backbone and high charge carrier mobilities, thienoisoindigo (TIIG)‐based polymers show great potential in organic electronic devices. In this work, two TIIG‐based D‐A conjugated polymers (PTIIG‐3T and PTIIG‐2T‐EDOT) were designed and synthesized, which exhibit high lying highest occupied molecular orbital (HOMO) energy level and can be facilely doped by FeCl3. Compared with PTIIG‐3T, one thiophene unit in the donor building block is replaced by 3,4‐ethylenedioxythiophene (EDOT) in PTIIG‐2T‐EDOT, and PTIIG‐2T‐EDOT shows a higher HOMO level with slightly higher coplanarity than PTIIG‐3T, which induce an enhancement in electrical conductivity after oxidation doping. After proper doping, doped PTIIG‐2T‐EDOT film achieved a higher TE power factor of 17.9 μW m−1 K−2 than that of PTIIG‐3T due to its higher conductivity. The results indicate that TIIG unit is a promising building block for future high‐performance conjugated polymers for thermoelectric applications, and incorporation of the EDOT unit into D‐A conjugated polymers could be an effective way to develop high performance thermoelectric polymers.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hubei Province