3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition

Published:2017-06-19 Issue:31 Volume:29 Page:1701888
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Qu Jiangtao¹,Du Sichao¹,Burgess Tim²,Wang Changhong³,Cui Xiangyuan⁴^ORCID,Gao Qiang²,Wang Weichao³,Tan Hark Hoe²^ORCID,Liu Hui³,Jagadish Chennupati²^ORCID,Zhang Yingjie⁵,Chen Hansheng¹,Khan Mansoor¹,Ringer Simon⁴,Zheng Rongkun¹^ORCID

Affiliation:

1. School of Physics and the Australian Institute for Nanoscale Science and Technology The University of Sydney 2006 Sydney Australia

2. Department of Electronic Materials Engineering The Australian National University 2601 Canberra Australia

3. Department of Electronic Science and Engineering Nankai University 300350 Tianjing China

4. Australian Centre for Microscopy & Microanalysis and Aerospace Mechanical and Mechatronic Engineering The University of Sydney 2006 Sydney Australia

5. Australian Nuclear Science and Technology Organisation 2001 Sydney Australia

Funder

Australian Nuclear Science and Technology Organisation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201701888

Reference83 articles.

1. Intel https://newsroom.intel.com/newsroom/wp‐content/uploads/sites/11/2017/03/10‐nm‐technology‐fact‐sheet.pdf(accessed: March 2017).

2. Physical Limitations of Semiconductor Devices