High Efficiency Cu2ZnSn(S,Se)4Solar Cells by Applying a Double In2S3/CdS Emitter-Reference-Cited by-同舟云学术

High Efficiency Cu2ZnSn(S,Se)4Solar Cells by Applying a Double In2S3/CdS Emitter

Published:2014-08-25 Issue:44 Volume:26 Page:7427-7431
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim Jeehwan¹,Hiroi Homare²,Todorov Teodor K.¹,Gunawan Oki¹,Kuwahara Masaru³,Gokmen Tayfun¹,Nair Dhruv¹,Hopstaken Marinus¹,Shin Byungha¹,Lee Yun Seog¹,Wang Wei¹,Sugimoto Hiroki²,Mitzi David B.¹

Affiliation:

1. IBM T. J. Watson Research Center; Yorktown Heights NY 10598 USA

2. Showa Shell Sekiyu K. K. & Solar Frontier K. K.; Japan

3. Tokyo Ohka Kogyo Co., Ltd; Japan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference17 articles.

1. The path towards a high-performance solution-processed kesterite solar cell

2. Co-evaporated Cu2ZnSnSe4 films and devices

3. Earth Abundant Element Cu2Zn(Sn1−xGex)S4 Nanocrystals for Tunable Band Gap Solar Cells: 6.8% Efficient Device Fabrication

4. Pure Sulfide Cu2ZnSnS4Thin Film Solar Cells Fabricated by Preheating an Electrodeposited Metallic Stack

5. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

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