Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films-Reference-Cited by-同舟云学术

Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films

Published:2014-05-22 Issue:29 Volume:26 Page:5005-5011
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Lee Daesu¹²,Jeon Byung Chul¹²,Yoon Aram³,Shin Yeong Jae¹²,Lee Myang Hwan⁴,Song Tae Kwon⁴,Bu Sang Don⁵,Kim Miyoung³,Chung Jin-Seok⁶,Yoon Jong-Gul⁷,Noh Tae Won¹²

Affiliation:

1. Center for Correlated Electron Systems; Institute for Basic Science (IBS); Seoul 151-747 Korea

2. Department of Physics and Astronomy; Seoul National University; Seoul 151-747 Korea

3. Department of Materials Science and Engineering; Seoul National University; Seoul 151-744 Korea

4. School of Nano and Advanced Materials Engineering; Changwon National University; Changwon 641-773 Korea

5. Department of Physics; Chonbuk National University; Jeonju 561-756 Korea

6. Department of Physics; Soongsil University; Seoul 156-743 Korea

7. Department of Physics; University of Suwon; Hwaseong Gyeonggi-do 445-743 Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201400654/fullpdf

Reference39 articles.

1. Physics of thin-film ferroelectric oxides

2. Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching

3. Active Control of Ferroelectric Switching Using Defect-Dipole Engineering

4. Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

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