High-Hole-Mobility Field-Effect Transistors Based onCo-Benzobisthiadiazole-Quaterthiophene-Reference-Cited by-同舟云学术

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High-Hole-Mobility Field-Effect Transistors Based onCo-Benzobisthiadiazole-Quaterthiophene

Published:2012-09-10 Issue:46 Volume:24 Page:6164-6168
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Fan Jian,Yuen Jonathan D.,Cui Weibin,Seifter Jason,Mohebbi Ali Reza,Wang Mingfeng,Zhou Huiqiong,Heeger Alan,Wudl Fred

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201202195/fullpdf

Reference28 articles.

1. High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

2. Molecular assembly and properties of polythiophenes

3. Organic heterostructures in organic field-effect transistors

4. Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics

5. 2,5-Bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4-(2H,5H)-dione-Based Donor–Acceptor Alternating Copolymer Bearing 5,5′-Di(thiophen-2-yl)-2,2′-biselenophene Exhibiting 1.5 cm2·V–1·s–1 Hole Mobility in Thin-Film Transistors

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