Symmetric Ultrafast Writing and Erasing Speeds in Quasi-Nonvolatile Memory via van der Waals Heterostructures-Reference-Cited by-同舟云学术

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Symmetric Ultrafast Writing and Erasing Speeds in Quasi-Nonvolatile Memory via van der Waals Heterostructures

Published:2019-01-28 Issue:11 Volume:31 Page:1808035
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Li Jingyu¹,Liu Lan¹²,Chen Xiaozhang¹,Liu Chunsen¹,Wang Jianlu²,Hu Weida²,Zhang David Wei¹,Zhou Peng¹^ORCID

Affiliation:

1. ASIC & System State Key Lab; School of Microelectronics; Fudan University; Shanghai 200433 China

2. State Key Laboratory of Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; Shanghai 200083 China

Funder

National Natural Science Foundation of China

National Key Research and Development Program

Shanghai Education Development Foundation

Shanghai Municipal Education Commission

Science and Technology Commission of Shanghai Municipality

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201808035/fullpdf

Reference46 articles.

1. A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation

2. Emerging memory technologies: Trends, challenges, and modeling methods

3. Memristive devices for computing

4. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

5. Electric Field Effect in Atomically Thin Carbon Films

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