Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors-Reference-Cited by-同舟云学术

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Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors

Published:2017-02-15 Issue:16 Volume:29 Page:1605685
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Nketia-Yawson Benjamin¹,Kang Seok-Ju¹,Tabi Grace Dansoa¹,Perinot Andrea²³,Caironi Mario²,Facchetti Antonio⁴,Noh Yong-Young¹

Affiliation:

1. Department of Energy and Materials Engineering; Dongguk University; 30 Pildong-ro, 1-gil Jung-gu Seoul 04620 Republic of Korea

2. Center for Nano Science and Technology @PoliMi; Istituto Italiano di Tecnologia; Via Pascoli 70/3 Milano 20133 Italy

3. Politecnico di Milano; Dipartimento di Fisica; P.za L. da Vinci 32 Milano 20133 Italy

4. Polyera Corporation; 8045 Lamon Avenue Skokie IL 60077 USA

Funder

Ministry of Science, ICT, and Future Planning, Republic of Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference47 articles.

1. Large Area and Flexible Electronics

2. Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm2V−1s−1

3. A Thienoisoindigo-Naphthalene Polymer with Ultrahigh Mobility of 14.4 cm2/V·s That Substantially Exceeds Benchmark Values for Amorphous Silicon Semiconductors

4. High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers

5. Large Enhancement of Carrier Transport in Solution-Processed Field-Effect Transistors by Fluorinated Dielectric Engineering

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