Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors-Reference-Cited by-同舟云学术

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Published:2016-02-02 Issue:14 Volume:28 Page:2772-2776
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kumar Suhas¹²,Graves Catherine E.¹,Strachan John Paul¹,Grafals Emmanuelle Merced¹,Kilcoyne Arthur L. David³,Tyliszczak Tolek³,Weker Johanna Nelson⁴,Nishi Yoshio²,Williams R. Stanley¹

Affiliation:

1. Hewlett Packard Laboratories; 1501 Page Mill Rd Palo Alto CA 94304 USA

2. Department of Electrical Engineering; Stanford University; Stanford CA 94305 USA

3. Advanced Light Source; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USA

4. Stanford Synchrotron Radiation Lightsource; SLAC National Accelerator Laboratory; 2575 Sand Hill Road Menlo Park CA 94025 USA

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201505435/fullpdf

Reference43 articles.

1. Engineering nonlinearity into memristors for passive crossbar applications

2. High switching endurance in TaOx memristive devices

3. Sub-nanosecond switching of a tantalum oxide memristor

4. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism

5. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

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