Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process-Reference-Cited by-同舟云学术

Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process

Published:2018-04-25 Issue:23 Volume:30 Page:1707412
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Daus Alwin¹^ORCID,Roldán-Carmona Cristina²,Domanski Konrad³,Knobelspies Stefan¹,Cantarella Giuseppe¹,Vogt Christian¹,Grätzel Michael³,Nazeeruddin Mohammad Khaja²,Tröster Gerhard¹

Affiliation:

1. Electronics Laboratory; Department of Information Technology and Electrical Engineering; ETH Zürich; Gloriastrasse 35 8092 Zürich Switzerland

2. Group for Molecular Engineering of Functional Materials; Institute of Chemical Sciences and Engineering; École Polytechnique Fédérale de Lausanne; Rue de l'Industrie 17, Case postale 440 1951 Sion Switzerland

3. Laboratory for Photonics and Interfaces; Institute of Chemical Sciences and Engineering; École Polytechnique Fédérale de Lausanne; Station 6 1015 Lausanne Switzerland

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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