Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60Phototransistor-Reference-Cited by-同舟云学术

Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single-Walled Carbon Nanotube/C60Phototransistor

Published:2014-12-08 Issue:4 Volume:27 Page:759-765
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Park Steve¹,Kim Soo Jin²,Nam Ji Hyun²,Pitner Gregory²,Lee Tae Hoon²,Ayzner Alexander L.³,Wang Huiliang¹,Fong Scott W.²,Vosgueritchian Michael³,Park Young Jun⁴,Brongersma Mark L.¹,Bao Zhenan³

Affiliation:

1. Department of Materials Science and Engineering; Stanford University; Durand Building, 496 Lomita Mall Stanford CA 94305-4034 USA

2. Department of Electrical Engineering; Stanford University; David Packard Building, 350 Serra Mall, Mail Code: 9505 Stanford CA 94305-9505 USA

3. Department of Chemical Engineering; Stanford University, Shriram Center; 443 Via Ortega, Room 307 Stanford CA 94305-4145 USA

4. Samsung Advanced Institute of Technology; Samsung Electronics Co. Ltd.; 130 Samsung-ro Yeongtong-gu, Suwon-si Gyeonggi-do 443-803 South Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference67 articles.

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3. Extraordinary Mobility in Semiconducting Carbon Nanotubes

4. A review of fabrication and applications of carbon nanotube film-based flexible electronics

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