Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling-Reference-Cited by-同舟云学术

Single Grain Boundary Break Junction for Suspended Nanogap Electrodes with Gapwidth Down to 1–2 nm by Focused Ion Beam Milling

Published:2015-04-08 Issue:19 Volume:27 Page:3002-3006
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Cui Ajuan¹,Liu Zhe²,Dong Huanli¹,Wang Yujin²,Zhen Yonggang¹,Li Wuxia²,Li Junjie²,Gu Changzhi²,Hu Wenping¹³

Affiliation:

1. Beijing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of Sciences Beijing 100190 China

2. Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of Sciences Beijing 100190 China

3. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) & Department of ChemistrySchool of ScienceTianjin University Tianjin 300072 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201500527

Reference74 articles.

1. Single-walled carbon nanotube electronics

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3. Ge/Si nanowire heterostructures as high-performance field-effect transistors

4. Silicon Vertically Integrated Nanowire Field Effect Transistors

5. Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors

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