Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM-Reference-Cited by-同舟云学术

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Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM

Published:2017-04-18 Issue:23 Volume:29 Page:1700212
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Cooper David¹²,Baeumer Christoph³,Bernier Nicolas¹²,Marchewka Astrid⁴,La Torre Camilla⁴,Dunin-Borkowski Rafal E.³⁵,Menzel Stephan³,Waser Rainer³⁴,Dittmann Regina³

Affiliation:

1. Université Grenoble Alpes; F-38000 Grenoble France

2. CEA; LETI; Minatec Campus; F-38054 Grenoble France

3. Peter Gruenberg Institute; Forschungszentrum Juelich GmbH and JARA-FIT; 52425 Juelich Germany

4. Institute of Electronic Materials; IWE2; RWTH Aachen University; 52056 Aachen Germany

5. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons; Forschungszentrum Juelich GmbH and RWTH Aachen University; 52425 Juelich Germany

Funder

Deutsche Forschungsgemeinschaft

European Research Council

Helmholtz-Gemeinschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference55 articles.

1. 2013

2. Nanoionics-based resistive switching memories

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Complementary resistive switches for passive nanocrossbar memories

5. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

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