Engineering Bandgaps of Monolayer MoS2and WS2on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects-Reference-Cited by-同舟云学术

Engineering Bandgaps of Monolayer MoS2and WS2on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

Published:2016-05-17 Issue:30 Volume:28 Page:6457-6464
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Bo¹²,Zhao Weijie²³,Ding Zijing¹⁴,Verzhbitskiy Ivan³,Li Linjun¹²,Lu Junpeng³,Chen Jianyi¹,Eda Goki¹²³,Loh Kian Ping¹²

Affiliation:

1. Department of Chemistry; National University of Singapore; 3 Science Drive 3 117543 Singapore

2. Centre for Advanced 2D Materials and Graphene Research Centre; National University of Singapore; 6 Science Drive 2 117546 Singapore

3. Department of Physics; National University of Singapore; 2 Science Drive 3 117542 Singapore

4. SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province; College of Optoelectronic Engineering; Shenzhen University; Shenzhen 518060 P. R. China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference70 articles.

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2. Emerging Photoluminescence in Monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Tightly bound trions in monolayer MoS2

5. Electrical control of neutral and charged excitons in a monolayer semiconductor

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