Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

Author:

Sun Yan1ORCID,Zhou Zishu1,Huang Zhen1,Wu Jiangbin2,Zhou Liujiang3,Cheng Yang4,Liu Jinqiu5,Zhu Chao6,Yu Maotao1,Yu Peng7,Zhu Wei3,Liu Yue1,Zhou Jian8,Liu Bowen1,Xie Hongguang1,Cao Yi1,Li Hai1,Wang Xinran8,Liu Kaihui4,Wang Xiaoyong5,Wang Jianpu1ORCID,Wang Lin1ORCID,Huang Wei19

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

2. Ming Hsieh Department of Electrical Engineering University of Southern California Los Angeles CA 90089 USA

3. Center for Nonlinear Studies and Theoretical Division Los Alamos National Laboratory Los Alamos NM 87545 USA

4. State Key Laboratory for Mesoscopic Physics School of Physics Department Peking University Beijing 100871 China

5. National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 China

6. Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore

7. School of Materials Science and Engineering Sun Yat‐sen University Guangzhou 510275 China

8. National Laboratory of Solid‐State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

9. Shaanxi Institute of Flexible Electronics (SIFE) Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi'an 710072 Shaanxi China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

U.S. Department of Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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