Electronic Properties of Isosymmetric Phase Boundaries in Highly Strained Ca-Doped BiFeO3-Reference-Cited by-同舟云学术

Electronic Properties of Isosymmetric Phase Boundaries in Highly Strained Ca-Doped BiFeO3

Published:2014-04-14 Issue:25 Volume:26 Page:4376-4380
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Seidel Jan¹²³,Trassin Morgan⁴⁵,Zhang Yi⁶,Maksymovych Peter⁷,Uhlig Tino⁸,Milde Peter⁸,Köhler Denny⁸,Baddorf Arthur P.⁷,Kalinin Sergei V.⁷,Eng Lukas M.⁸,Pan Xiaoqing⁶,Ramesh Ramamoorthy²³⁴

Affiliation:

1. School of Materials Science and Engineering; University of New South Wales; Sydney NSW 2052 Australia

2. Materials Sciences Division; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USA

3. Department of Physics; University of California, Berkeley; Berkeley CA 94720 USA

4. Department of Materials Science and Engineering; University of California, Berkeley; Berkeley CA 94720 USA

5. Department of Materials; ETH Zurich; Wolfgang-Pauli-Strasse 10 8093 Zurich Switzerland

6. Department of Materials Science and Engineering; University of Michigan; Ann Arbor MI 48109 USA

7. Center for Nanophase Materials Science; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

8. Institute of Applied Photophysics; Technische Universität Dresden; 01062 Dresden Germany

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201400557/fullpdf

Reference43 articles.

1. Domain wall nanoelectronics

2. Interface Physics in Complex Oxide Heterostructures

3. Oxide Interfaces—An Opportunity for Electronics

4. Growth and structural characterization ofFe3O4and NiO thin films and superlattices grown by oxygen-plasma-assisted molecular-beam epitaxy

5. Link between Perpendicular Coupling and Exchange Biasing inFe3O4/CoOMultilayers

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