Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level-Reference-Cited by-同舟云学术

Quantum‐Hall to Insulator Transition in Ultra‐Low‐Carrier‐Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Published:2019-07 Issue:36 Volume:31 Page:1901091
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Salehi Maryam¹^ORCID,Shapourian Hassan²^ORCID,Rosen Ilan Thomas³⁴,Han Myung‐Geun⁵,Moon Jisoo⁶^ORCID,Shibayev Pavel⁶,Jain Deepti⁶,Goldhaber‐Gordon David⁴⁷^ORCID,Oh Seongshik⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering Rutgers The State University of New Jersey Piscataway NJ 08854 USA

2. James Franck Institute and Kadanoff Center for Theoretical Physics University of Chicago IL 60637 USA

3. Department of Applied Physics Stanford University Stanford CA 94305 USA

4. Stanford Institute for Materials and Energy Sciences SLAC National Accelerator Laboratory Menlo Park CA 94025 USA

5. Condensed Matter Physics and Materials Science Brookhaven National Lab Upton NY 11973 USA

6. Department of Physics and Astronomy Rutgers The State University of New Jersey Piscataway NJ 08854 USA

7. Department of Physics Stanford University Stanford CA 94305 USA

Funder

Gordon and Betty Moore Foundation

National Science Foundation

U.S. Department of Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201901091

Reference41 articles.

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2. Colloquium: Topological insulators

3. Topological Insulator Materials

4. Observation of Zeeman effect in topological surface state with distinct material dependence

5. Landau Quantization of Topological Surface States inBi2Se3

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