Emergence of Topological Hall Effect in a SrRuO3 Single Layer-Reference-Cited by-同舟云学术

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Emergence of Topological Hall Effect in a SrRuO3 Single Layer

Published:2019-01-07 Issue:8 Volume:31 Page:1807008
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Qin Qing¹,Liu Liang¹,Lin Weinan¹,Shu Xinyu¹,Xie Qidong¹,Lim Zhishiuh²,Li Changjian¹,He Shikun³,Chow Gan Moog¹,Chen Jingsheng¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering; National University of Singapore; Singapore 117575 Singapore

2. NUSNNI-Nanocore; National University of Singapore; Singapore 117411 Singapore

3. Data Storage Institute; Agency for Science; Technology and Research (A*STAR); Singapore 138634 Singapore

Funder

National Research Foundation Singapore

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201807008/fullpdf

Reference21 articles.

1. Chirality from Interfacial Spin-Orbit Coupling Effects in Magnetic Bilayers

2. Interface-driven topological Hall effect in SrRuO 3 -SrIrO 3 bilayer

3. Topological Hall Effect and Berry Phase in Magnetic Nanostructures

4. Topological Hall Effect in theAPhase of MnSi

5. Skyrmion Strings and the Anomalous Hall Effect inCrO2

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3. Orientational Switching of Perpendicular Magnetic Anisotropy and Near-Infrared Plasmonic States in SrRuO₃ Thin Films: Implications for Spintronic Devices;ACS Applied Nano Materials;2024-08-14

4. Quantum materials for spintronic applications;npj Spintronics;2024-07-25

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