In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device-Reference-Cited by-同舟云学术

In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device

Published:2015-10-26 Issue:47 Volume:27 Page:7767-7774
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Tian He¹,Zhao Haiming¹,Wang Xue-Feng¹,Xie Qian-Yi¹,Chen Hong-Yu²,Mohammad Mohammad Ali¹,Li Cheng¹,Mi Wen-Tian¹,Bie Zhi¹,Yeh Chao-Hui³,Yang Yi¹,Wong H.-S. Philip²,Chiu Po-Wen³,Ren Tian-Ling¹

Affiliation:

1. Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList); Tsinghua University; Beijing 100084 China

2. Department of Electrical Engineering and Stanford System X Alliance; Stanford University; Stanford CA 94305 USA

3. Department of Electrical Engineering; National Tsing Hua University; Hsinchu 30013 Taiwan

Funder

National Natural Science Foundation of China

National Key Project of Science and Technology

973 Program

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference37 articles.

1. Nanoionics-based resistive switching memories

2. Resistive non-volatile memory devices (Invited Paper)

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