Lateral Built-In Potential of Monolayer MoS2-WS2In-Plane Heterostructures by a Shortcut Growth Strategy-Reference-Cited by-同舟云学术

Lateral Built-In Potential of Monolayer MoS2-WS2In-Plane Heterostructures by a Shortcut Growth Strategy

Published:2015-09-23 Issue:41 Volume:27 Page:6431-6437
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chen Kun¹,Wan Xi¹,Xie Weiguang²,Wen Jinxiu³,Kang Zhiwen¹,Zeng Xiaoliang⁴,Chen Huanjun³,Xu Jianbin¹

Affiliation:

1. Department of Electronic Engineering and Materials Science and Technology Research Center; The Chinese University of Hong Kong; Hong Kong SAR 999077 P. R. China

2. Siyuan Laboratory; Department of Physics; Jinan University; Guangzhou Guangdong 510632 China

3. State Key Laboratory of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology; School of Physics and Engineering; Sun Yat-sen University; Guangzhou 510275 China

4. Shenzhen Institutes of Advanced Technology; Chinese Academy of Sciences; Shenzhen 518055 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference48 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

3. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

4. Giant Photoamplification in Indirect-Bandgap Multilayer MoS2Phototransistors with Local Bottom-Gate Structures

5. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared

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