Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics-Reference-Cited by-同舟云学术

Activated Electron-Transport Layers for Infrared Quantum Dot Optoelectronics

Published:2018-05-28 Issue:29 Volume:30 Page:1801720
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Choi Jongmin¹,Jo Jea Woong¹,de Arquer F. Pelayo García¹,Zhao Yong-Biao¹²,Sun Bin¹,Kim Junghwan¹,Choi Min-Jae¹,Baek Se-Woong¹,Proppe Andrew H.¹³,Seifitokaldani Ali¹,Nam Dae-Hyun¹,Li Peicheng²,Ouellette Olivier¹,Kim Younghoon¹,Voznyy Oleksandr¹,Hoogland Sjoerd²,Kelley Shana O.³⁴,Lu Zheng-Hong²,Sargent Edward H.¹

Affiliation:

1. Department of Electrical and Computer Engineering; University of Toronto; 10 King's College Road Toronto Ontario M5S 3G4 Canada

2. Department of Materials Science and Engineering; University of Toronto; 184 College Street Toronto Ontario M5S 3E4 Canada

3. Department of Chemistry; University of Toronto; 80 St. George Street Toronto Ontario M5S 3G4 Canada

4. Department of Pharmaceutical Sciences; Leslie Dan Faculty of Pharmacy; University of Toronto; Toronto Ontario M5S 3M2 Canada

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference38 articles.

1. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics

2. Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell

3. Colloidal quantum dot solids for solution-processed solar cells

4. Ultrasensitive solution-cast quantum dot photodetectors

5. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays

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