High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures-Reference-Cited by-同舟云学术

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High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Published:2016-04-01 Issue:21 Volume:28 Page:4120-4125
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Liu Yuan¹,Sheng Jiming¹,Wu Hao¹,He Qiyuan²,Cheng Hung-Chieh¹,Shakir Muhammad Imran³,Huang Yu¹,Duan Xiangfeng²

Affiliation:

1. Department of Materials Science and Engineering; University of California; Los Angeles CA 90095 USA

2. Department of Chemistry and Biochemistry; University of California; Los Angeles CA 90095 USA

3. Sustainable Energy Technologies Center; College of Engineering; King Saud University; Riyadh 11421 Kingdom of Saudi Arabia

Funder

ONR

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference36 articles.

1. Graphene transistors

2. A roadmap for graphene

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

5. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

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1. Large-scale sub-5-nm vertical transistors by van der Waals integration;Nature Communications;2024-09-03

2. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides;Chemical Reviews;2024-03-01

3. PVA-assisted metal transfer for vertical WSe₂ photodiode with asymmetric van der Waals contacts;Nanophotonics;2023-08-28

4. Numerical Study of a Vertical Tunneling Transistor Based on Gr/BC₂N/BC₆N and BC₂N′/hBN/BC₂N′ Heterostructures;ACS Applied Electronic Materials;2023-07-13

5. Vertical transistors based on two-dimensional semiconductors;Chinese Science Bulletin;2023-05-17

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