The Study of Spin-Valley Coupling in Atomically Thin Group VI Transition Metal Dichalcogenides-Reference-Cited by-同舟云学术

The Study of Spin-Valley Coupling in Atomically Thin Group VI Transition Metal Dichalcogenides

Published:2014-04-06 Issue:31 Volume:26 Page:5504-5507
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Zhu Bairen¹,Zeng Hualing²,Dai Junfeng³,Cui Xiaodong¹

Affiliation:

1. Physics Department; The University of Hong Kong; Prokfulam Hong Kong 999077 China

2. Department of Physics; The Chinese University of Hong Kong Shatin; New Territories Hong Kong 999077 China

3. Physics Department; South University of Science and Technology of China; No. 1088, Xueyuan Rd., Xili, Nanshan District Shenzhen 518055 Guangdong China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference13 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Berry phase effects on electronic properties

4. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport

5. Valley-dependent optoelectronics from inversion symmetry breaking

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