Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric-Reference-Cited by-同舟云学术

Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Published:2019-05-30 Issue:29 Volume:31 Page:1901300
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Xue Fei¹^ORCID,He Xin¹,Retamal José Ramón Durán²,Han Ali¹,Zhang Junwei¹,Liu Zhixiong¹,Huang Jing‐Kai¹,Hu Weijin³,Tung Vincent¹,He Jr‐Hau²,Li Lain‐Jong¹⁴,Zhang Xixiang¹^ORCID

Affiliation:

1. Physical Sciences and Engineering DivisionKing Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia

2. Computer, Electrical, and Mathematical Sciences and Engineering DivisionKing Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia

3. Shenyang National Laboratory for Materials ScienceInstitute of Metal Research (IMR)Chinese Academy of Sciences (CAS) Shenyang 110016 China

4. Department of Materials Science and EngineeringUniversity of New South Wales NSW 2052 Australia

Funder

King Abdullah University of Science and Technology

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201901300

Reference39 articles.

1. Ferroelectric tunnel junctions for information storage and processing