Ferroelectric Domain Wall Motion in Freestanding Single‐Crystal Complex Oxide Thin Film-Reference-Cited by-同舟云学术

Ferroelectric Domain Wall Motion in Freestanding Single‐Crystal Complex Oxide Thin Film

Published:2019-12-09 Issue:4 Volume:32 Page:1907036
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Bakaul Saidur R.¹^ORCID,Kim Jaegyu²,Hong Seungbum²,Cherukara Mathew J.³,Zhou Tao³,Stan Liliana³,Serrao Claudy R.⁴,Salahuddin Sayeef⁴,Petford‐Long Amanda K.¹,Fong Dillon D.¹,Holt Martin V.³

Affiliation:

1. Materials Science DivisionArgonne National Laboratory Lemont IL 60439 USA

2. Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

3. Center for Nanoscale MaterialsArgonne National Laboratory Lemont IL 60439 USA

4. Electrical Engineering & Computer SciencesUniversity of California Berkeley CA 94720 USA

Funder

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Office of Naval Research

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201907036

Reference37 articles.

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4. Single crystal functional oxides on silicon

5. Two-dimensional limit of crystalline order in perovskite membrane films

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