Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors-Reference-Cited by-同舟云学术

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Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

Published:2020-03 Issue:12 Volume:32 Page:1907826
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim Min‐Kyu¹,Lee Jang‐Sik¹^ORCID

Affiliation:

1. Department of Materials Science and EngineeringPohang University of Science and Technology (POSTECH) Pohang 37673 Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201907826

Reference61 articles.

1. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

2. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

4. Cortical rewiring and information storage

5. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

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