In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films-Reference-Cited by-同舟云学术

In Situ Method Correlating Raman Vibrational Characteristics to Chemical Expansion via Oxygen Nonstoichiometry of Perovskite Thin Films

Published:2019-06-25 Issue:33 Volume:31 Page:1902493
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Sediva Eva¹²,Defferriere Thomas¹,Perry Nicola H.³⁴,Tuller Harry L.¹,Rupp Jennifer L. M.¹²⁵^ORCID

Affiliation:

1. Department of Materials Science and EngineeringMassachusetts Institute of Technology 77 Massachusetts Av. Cambridge MA 02139 USA

2. ETHZ Department of Materials Hönggerbergring 64 8093 Zürich Switzerland

3. Department of Materials Science and Engineering and Materials Research LaboratoryUniversity of Illinois at Urbana‐Champaign 1304 W. Green St. Urbana IL 61801 USA

4. International Institute for Carbon‐Neutral Energy Research (WPI‐I2CNER)Kyushu University 744 Motooka Nishi‐ku Fukuoka 819‐0395 Japan

5. Department of Electrical Engineering and Computer ScienceMassachusetts Institute of Technology 77 Massachusetts Av. Cambridge MA 02139 USA

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

U.S. Department of Energy

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201902493

Reference51 articles.

1. The electrical properties and stability of SrTi0.65Fe0.35O3−δ thin films for automotive oxygen sensor applications

2. Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature

3. Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices

4. Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits

5. Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δBits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance

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