Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect-Reference-Cited by-同舟云学术

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Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

Published:2016-02-09 Issue:14 Volume:28 Page:2760-2764
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Luo Zhaochu¹²,Xiong Chengyue¹²,Zhang Xu³,Guo Zhen-Gang¹²,Cai Jianwang³,Zhang Xiaozhong¹²

Affiliation:

1. School of Materials Science and Engineering; Tsinghua University; Beijing 100084 P. R. China

2. Beijing National Center for Electron Microscopy; Tsinghua University; Beijing 100084 P. R. China

3. Institute of Physics; Chinese Academy of Sciences; Beijing 100084 P. R. China

Funder

National Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference34 articles.

1. Magnetoelectronics

2. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

3. Large, non-saturating magnetoresistance in WTe2

4. Extremely Large Magnetoresistance in Boron-Doped Silicon

5. Large positive magnetoresistive effect in silicon induced by the space-charge effect

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