Te-Doped Black Phosphorus Field-Effect Transistors-Reference-Cited by-同舟云学术

Te-Doped Black Phosphorus Field-Effect Transistors

Published:2016-09-04 Issue:42 Volume:28 Page:9408-9415
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yang Bingchao¹,Wan Bensong²³,Zhou Qionghua⁴,Wang Yue⁵,Hu Wentao¹,Lv Weiming¹²,Chen Qian⁴,Zeng Zhongming²,Wen Fusheng¹,Xiang Jianyong¹,Yuan Shijun⁴,Wang Jinlan⁴,Zhang Baoshun²,Wang Wenhong⁵,Zhang Junying³,Xu Bo¹,Zhao Zhisheng¹,Tian Yongjun¹,Liu Zhongyuan¹

Affiliation:

1. State Key Laboratory of Metastable Materials Science and Technology; Yanshan University; Qinghuangdao 066004 P. R. China

2. Key Laboratory of Nanodevices and Applications; Suzhou Institute of Nano-tech and Nano-bionics; Chinese Academy of Sciences; Ruoshui Road 398 Suzhou 215123 China

3. Department of Physics; Beihang University; Beijing 100191 China

4. Department of Physics; Southeast University; Nanjing 211189 China

5. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China

Funder

National Natural Science Foundation of China

National Science Fund for Distinguished Young Scholars

National Natural Science Foundation of Jiangsu

Program for New Century Excellent Talents in University

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science