Chemical Growth of 1T -TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity-Reference-Cited by-同舟云学术

Chemical Growth of 1T -TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity

Published:2018-08-01 Issue:38 Volume:30 Page:1800074
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wang Xinsheng¹,Liu Haining¹²,Wu Juanxia¹,Lin Junhao³,He Wen⁴,Wang Hui⁴,Shi Xinghua²⁴,Suenaga Kazutomo³,Xie Liming¹²^ORCID

Affiliation:

1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology; CAS Center for Excellence in Nanoscience; National Center for Nanoscience and Technology; Beijing 100190 P. R. China

2. University of Chinese Academy of Sciences; Beijing 100049 P. R. China

3. National Institute of Advanced Industrial Science and Technology (AIST); Tsukuba 305-8565 Japan

4. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication; CAS Center for Excellence in Nanoscience; National Centre for Nanoscience and Technology; Beijing 100190 P. R. China

Funder

Key Research Program of Frontier Sciences of CAS

National Natural Science Foundation of China

Beijing Talents Fund

JST-ACCEL

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201800074/fullpdf