Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes-Reference-Cited by-同舟云学术

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Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes

Published:2016-05-17 Issue:33 Volume:28 Page:7228-7233
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Holovchenko Anastasia¹,Dugay Julien¹,Giménez-Marqués Mónica²,Torres-Cavanillas Ramón²,Coronado Eugenio²,van der Zant Herre S. J.¹

Affiliation:

1. Kavli Institute of Nanoscience; Delft University of Technology; Lorentzweg 1 2628 CJ Delft The Netherlands

2. Instituto de Ciencia Molecular; Unversidad de Valencia; Catedrático José Beltrán 2 46980 Paterna Spain

Funder

EU (Advanced ERC grants SPINMOL and Mols@Mols)

COST Action MOLSPIN

NWO/OCW

Spanish MINECO

Generalidad Valenciana (PROMETEO and ISIC Programs of excellence)

Blaise Pascal International Chair

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference30 articles.

1. Thermal and Optical Switching of Iron(II) Complexes

2. Spin-Transition Polymers: From Molecular Materials Toward Memory Devices

3. Reversibility of light-induced excited spin state trapping in the Fe(ptz)6(BF4)2, and the Zn1−xFex(ptz)6(BF4)2 spin-crossover systems

4. Guest Tunable Structure and Spin Crossover Properties in a Nanoporous Coordination Framework Material

5. Spin-Crossover Modification through Selective CO2 Sorption

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