Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO 3 Resistive Switching Memories-Reference-Cited by-同舟云学术

Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO 3 Resistive Switching Memories

Published:2019-05-20 Issue:28 Volume:31 Page:1901322
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kwon Deok‐Hwang¹²^ORCID,Lee Shinbuhm³⁴,Kang Chan Soon¹²,Choi Yong Seok¹²,Kang Sung Jin¹²,Cho Hae Lim¹²,Sohn Woonbae¹²,Jo Janghyun¹²,Lee Seung‐Yong¹²,Oh Kyu Hwan¹²,Noh Tae Won⁴⁵,De Souza Roger A.⁶,Martin Manfred¹⁶,Kim Miyoung¹²⁵^ORCID

Affiliation:

1. Department of Materials Science and EngineeringSeoul National University Seoul 08826 Republic of Korea

2. Research Institute of Advanced MaterialsSeoul National University Seoul 08826 Republic of Korea

3. Department of Emerging Materials ScienceDaegu‐Gyeongbuk Institute of Science and Technology Daegu 42988 Republic of Korea

4. Department of Physics and AstronomySeoul National University Seoul 08826 Republic of Korea

5. Center for Correlated Electron SystemsInstitute for Basic Science (IBS) Seoul 08826 Republic of Korea

6. Institute of Physical ChemistryRWTH Aachen University Aachen 52074 Germany

Funder

Institute for Basic Science

National Research Foundation of Korea

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.201901322

Reference61 articles.

1. Nanoionics-based resistive switching memories

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Resistive switching in transition metal oxides

4. Memristive devices for computing

5. The missing memristor found

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